new product DMP2160UW p-channel enhancem ent mode mosfet features ? low on-resistance ? 100m ? @ v gs = -4.5v ? 120m ? @ v gs = -2.5v ? 160m ? @ v gs = -1.8v ? very low gate threshold voltage v gs(th) 1v ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot323 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals connections: see diagram below ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number compliance case packaging DMP2160UW-7 standard sot323 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot323 top view top view internal schematic source gate drain gs d dmf = marking code ym = date code marking y = year (ex: a = 2013) m = month (ex: 9 = september) dmf ym e3 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 5) t a = +25c t a = +70c i d -1.5 -1.2 a pulsed drain current i dm -10 a thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 350 mw thermal resistance, junction to ambient r ja 360 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current t j = +25c i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? ? ? 100 800 na v gs = 8v, v ds = 0v v gs = 12v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) -0.4 -0.6 -0.9 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 75 90 120 100 120 160 m ? v gs = -4.5v, i d = -1.5a v gs = -2.5v, i d = -1.2a v gs = -1.8v, i d = -1a forward transconductance g fs ? 4 ? s v ds = -10v, i d = -1.5a diode forward voltage (note 6) v sd ? ? -1.0 v v gs = 0v, i s = -1.0a dynamic characteristics input capacitance c iss ? 627 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 64 ? pf reverse transfer capacitance c rss ? 53 ? pf notes: 3. device mounted on 1in 2 fr-4 pcb with 2 oz. copper. t 10 sec. 4. short duration pulse test used to minimize self-heating effect. DMP2160UW product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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